边继明

个人信息Personal Information

教授

博士生导师

硕士生导师

性别:男

毕业院校:中科院上海硅酸盐研究所

学位:博士

所在单位:物理学院

学科:微电子学与固体电子学. 凝聚态物理

办公地点:大连理工大学科技园C座301-1办公室

联系方式:E-mail:jmbian@dlut.edu.cn.

电子邮箱:jmbian@dlut.edu.cn

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Structural and optical properties of VO2 film grown on sapphire substrate by pulsed laser deposition

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论文类型:会议论文

发表时间:2014-03-28

收录刊物:EI

卷号:912-914

页面范围:325-328

摘要:VO2 films were grown on sapphire substrates by pulsed laser deposition (PLD), and the structural and optical properties of as-grown films were investigated by X-ray diffraction (XRD), field effect scanning electron microscopy (FESEM), photoluminescence (PL), and optical-transmission measurements. The oxygen partial pressure in the growth chamber was found to be the key factor deciding the microstructure and properties of as-deposited VO2 films, and its effects and corresponding mechanism were investigated systemically. Results indicated that dense and uniform VO2 films with smooth surface were achieved by PLD under optimized oxygen partial pressure. Strong blue emission peaks were observed in room temperature photoluminescence (PL) spectra. Excellent selective optical-transmission of the VO2 thin films from 200~3000 nm were also recorded at room temperature. © (2014) Trans Tech Publications, Switzerland.