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论文类型：会议论文

发表时间：2010-06-19

收录刊物：EI、Scopus

摘要：To realize practical application of short-wavelength optoelectronic devices (such as LEDs and LDs) based on ZnO materials, electroluminescence (EL) from ZnO based junction device is pivotal. In our recent studies, ZnO based homojunction devices with different structures were grown by metal organic chemical vapor deposition (MOCVD). Desirable rectifying behavior is observed from the current-voltage curve of the ZnO p-n homojunction. Furthermore, a distinct electroluminescence with a dominant emission peak centered at blue-violet region was observed at room temperature from the heterojunction structure under forward bias conditions. The origins of the EL emissions are discussed in comparison with the photoluminescence spectra. ?2010 IEEE.