边继明

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教授

博士生导师

硕士生导师

性别:男

毕业院校:中科院上海硅酸盐研究所

学位:博士

所在单位:物理学院

学科:微电子学与固体电子学. 凝聚态物理

办公地点:大连理工大学科技园C座301-1办公室

联系方式:E-mail:jmbian@dlut.edu.cn.

电子邮箱:jmbian@dlut.edu.cn

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Growth and transparent conductive properties of ITO films on flexible polyimide (PI) substrates

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论文类型:期刊论文

发表时间:2011-08-01

发表刊物:Gongneng Cailiao/Journal of Functional Materials

收录刊物:EI、PKU、ISTIC、Scopus

卷号:42

期号:SUPPL. 4

页面范围:644-647

ISSN号:10019731

摘要:ITO films are deposited on flexible polyimide (PI) substrate by DC magnetron sputtering, and its structural and electrical properties are systematically investigated by X-ray diffraction analysis (XRD), Hall effect measurement (HL) and UV-Vis spectrophotometer. The results indicate that the sputtering power and deposition pressure are the dominant factors influencing the transparent conductive properties of as-grown ITO films on PI substrates, and the effect mechanism of the sputtering power and the deposition pressure are systematically investigated. The high performance ITO transparent conductive film with the visible transparency of 86% and the average resistivity of 3.1    10-4       cm are successfully achieved at the optimized parameters(sputtering power of 100W and deposition presure of 0.4Pa).