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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：中科院上海硅酸盐研究所
学位：博士
所在单位：物理学院
学科：微电子学与固体电子学. 凝聚态物理
办公地点：大连理工大学科技园C座301-1办公室
联系方式：E-mail:jmbian@dlut.edu.cn.
电子邮箱：jmbian@dlut.edu.cn
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Performance-Improved Normally-off A1GaN/GaN High-Electron Mobility Transistors with a Designed p-GaN Area under the Recessed Gate
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论文类型：会议论文
发表时间：2016-01-01
收录刊物：CPCI-S
页面范围：1230-1232
摘要：Stable normally-off operation with high threshold voltage (Vth) is strongly desired in power switching applications. A p-GaN area under the barrier-recessed gate is employed to improve the VI, and off-state characteristics of the GaN-based HEMTs. TCAD-based device simulations are carried out to demonstrate and optimize the proposed structures. Finally, improved performances with Vth over 5V and breakdown voltage (BV) over 1500V are achieved in the HEMTs with combined gate p-GaN design and multiple step-shaped field plate structures.