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发表时间：2007-01-01

发表刊物：无机材料学报

所属单位：物理学院

卷号：22

期号：1

页面范围：173-175

ISSN号：1000-324X

摘要：ZnO has recently become a very popular material due to its great potential for optoelectronics applications. To realize practical application of short-wavelength optoelectronic devices (such as LEDs and LDs) based on ZnO materials, electroluminescence (EL) from ZnO p-n homojunction is pivotal. In this article, ZnO homojunction was grown on single-crystal GaAs (100) substrate by ultrasonic spray pyrolysis with Zn(CH3COO)(2)center dot 2H(2)O as precursor solution. CH3COONH4 and In(NO3)(3) aqueous solutions were chosen as the doping sources of nitrogen and indium respectively. The ZnO homojunction was comprised of N-In codoped p-type ZnO and unintentionally doped n-type ZnO film. Ohmic contact layers on n-type ZnO layer and GaAs substrate were formed by Zn/Au and Au/Ge/Ni electrode respectively. Moreover, light emission was observed under forward current injection at room temperature, the emission could be clearly seen by the naked eye in a darkened room. With the demonstrated success of electroluminescence from ZnO p-n homojunction at room temperature, the application of short-wavelength optoelectronic devices based on ZnO materials should be possible in the near future.

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