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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：中科院上海硅酸盐研究所
学位：博士
所在单位：物理学院
学科：微电子学与固体电子学. 凝聚态物理
办公地点：大连理工大学科技园C座301-1办公室
联系方式：E-mail:jmbian@dlut.edu.cn.
电子邮箱：jmbian@dlut.edu.cn
Synthesis of SiO2/beta-SiC/graphite hybrid composite by low temperature hot filament chemical vapor deposition
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论文类型：期刊论文
发表时间：2013-11-18
发表刊物：APPLIED PHYSICS LETTERS
收录刊物：SCIE、EI、Scopus
卷号：103
期号：21
ISSN号：0003-6951
摘要：beta-SiC thin films were synthesized directly on graphite by hot filament chemical vapor deposition at low temperature. SiH4 diluted in hydrogen was employed as the silicon source, while graphite was functioned as both substrate and carbon source for the as-grown beta-SiC films. X-ray diffraction and Fourier transform infrared analysis indicate that SiO2/beta-SiC/graphite hybrid composite was formed after post annealing treatment, and its crystalline quality can be remarkably improved under optimized annealing conditions. The possible growth mechanism was proposed based on in situ etching of graphite by reactive hydrogen radicals at the atomic level. (C) 2013 AIP Publishing LLC.