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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：中科院上海硅酸盐研究所
学位：博士
所在单位：物理学院
学科：微电子学与固体电子学. 凝聚态物理
办公地点：大连理工大学科技园C座301-1办公室
联系方式：E-mail:jmbian@dlut.edu.cn.
电子邮箱：jmbian@dlut.edu.cn
Adjusted surface work function of InN films annealed at vacuum and at high-pressure N-2 conditions
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论文类型：期刊论文
发表时间：2013-03-01
发表刊物：MATERIALS LETTERS
收录刊物：SCIE、EI
卷号：95
页面范围：135-138
ISSN号：0167-577X
关键字：Surface work function; InN; Thin films; Surfaces; Annealing
摘要：Annealing studies were performed to investigate the effects of heat treatment on InN thin films by changing the annealing condition from vacuum to high pressure N-2. A significant variation of similar to 400 meV in the surface work function was observed for InN films. The basic principles of Kelvin probe measurement revealed that the surface band bending E-SBB is crucial in investigating the significant changes of surface work function on the InN. The stoichiometric ratio imbalance of In and N was indirectly determined to be the main cause of the variation in band bending by analyzing the X-ray diffraction and energy dispersive X-ray measurements. Thus, the annealing treatment could be an effective method to adjust the surface work function of InN by changing the annealing condition from vacuum to high pressure N-2. (C) 2012 Elsevier B.V. All rights reserved.