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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：中科院上海硅酸盐研究所
学位：博士
所在单位：物理学院
学科：微电子学与固体电子学. 凝聚态物理
办公地点：大连理工大学科技园C座301-1办公室
联系方式：E-mail:jmbian@dlut.edu.cn.
电子邮箱：jmbian@dlut.edu.cn
ZnO-based graphite-insulator-semiconductor diode for transferable and low thermal resistance high-power devices
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论文类型：期刊论文
发表时间：2012-07-30
发表刊物：APPLIED PHYSICS LETTERS
收录刊物：SCIE、EI、Scopus
卷号：101
期号：5
ISSN号：0003-6951
摘要：ZnO-based graphite-insulator-semiconductor (GIS) diode was fabricated on the high thermal and electrical conductive graphite substrate, with a SiO2 thin layer employed as the insulator layer. The current-voltage characteristics exhibit an excellent rectifying diode-like behavior with an obvious turn on voltage of 2.0 V and rather low leakage current of similar to 10(-4) A. An interesting negative capacitance phenomenon was also observed from the GIS diode. The excellent heat dissipation performance of the GIS diode compared with conventional sapphire based devices was experimentally demonstrated, which was of special interest for the development of high-power semiconductor devices with sufficient power durability. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4742150]