边继明

个人信息Personal Information

教授

博士生导师

硕士生导师

性别:男

毕业院校:中科院上海硅酸盐研究所

学位:博士

所在单位:物理学院

学科:微电子学与固体电子学. 凝聚态物理

办公地点:大连理工大学科技园C座301-1办公室

联系方式:E-mail:jmbian@dlut.edu.cn.

电子邮箱:jmbian@dlut.edu.cn

扫描关注

论文成果

当前位置: 边继明 >> 科学研究 >> 论文成果

Fabrication of a Homojunction Light Emitting Diode with ZnO-Nanorods/ZnO:As-Film Structure

点击次数:

论文类型:期刊论文

发表时间:2012-01-01

发表刊物:ELECTROCHEMICAL AND SOLID STATE LETTERS

收录刊物:SCIE、EI、Scopus

卷号:15

期号:5

页面范围:H164-H166

ISSN号:1099-0062

摘要:A novel ZnO homojunction light emitting diode (LED) with n-ZnO-nanorods/p-ZnO:As-film structure is fabricated on the GaAs substrate. Desirable rectifying behavior and distinct ultraviolet electroluminescence emission are observed from this novel structured ZnO homojunction LED. The well-aligned n-type one-dimensional ZnO nanorods are synthesized by a simple wet chemical bath deposition. To fabricate the ZnO nanorods on the GaAs substrate, a key two-dimensional intermediate ZnO:As film layer is employed. The ZnO:As film is grown by metal organic chemical vapor deposition followed by an annealing treatment. Moreover, the intermediate ZnO:As film is also used as the p-type layer of the ZnO LED. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.020205esl] All rights reserved.