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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：中科院上海硅酸盐研究所
学位：博士
所在单位：物理学院
学科：微电子学与固体电子学. 凝聚态物理
办公地点：大连理工大学科技园C座301-1办公室
联系方式：E-mail:jmbian@dlut.edu.cn.
电子邮箱：jmbian@dlut.edu.cn
The Preparation and Characteristics of InxGa1-xN (0.06 <= x <= 0.58) Films Deposited by ECR-PEMOCVD
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论文类型：期刊论文
发表时间：2011-10-01
发表刊物：CHINESE PHYSICS LETTERS
收录刊物：Scopus、SCIE、ISTIC
卷号：28
期号：10
ISSN号：0256-307X
摘要：We investigate the structural property and surface morphology of InxGa1-xN films for In compositions ranging from 0.06 to 0.58, which are deposited by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The results of x-ray diffraction (XRD) in InGaN films confirm that they have excellent c-axis orientation. The In content in the InGaN epilayers is checked by electron probe microanalysis (EPMA), which reveals that In fractions determined by XRD are in good agreement with the EPMA results. Atomic force microscopy measurements reveal that the grown films have a surface roughness that varies between 4.16 and 8.14 nm. The results suggest that it is possible to deposit high-c-axis-orientation InGaN films with different In contents.