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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：中科院上海硅酸盐研究所
学位：博士
所在单位：物理学院
学科：微电子学与固体电子学. 凝聚态物理
办公地点：大连理工大学科技园C座301-1办公室
联系方式：E-mail:jmbian@dlut.edu.cn.
电子邮箱：jmbian@dlut.edu.cn
Effect of different annealing temperature on Sb-doped ZnO thin films prepared by pulsed laser deposition on sapphire substrates
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论文类型：期刊论文
发表时间：2011-03-15
发表刊物：APPLIED SURFACE SCIENCE
收录刊物：SCIE、EI
卷号：257
期号：11
页面范围：5121-5124
ISSN号：0169-4332
关键字：Sb-doped ZnO; Pulsed laser deposition; Hall-effect-measurement; X-ray diffraction; Scan electronic microscopy; Photoluminescence spectra
摘要：Influence of annealing temperature on the properties of Sb-doped ZnO thin films were studied. Hall measurement results indicated that the Sb-doped ZnO annealed at 950 degrees C was p-type conductivity. X-ray diffraction (XRD) results indicated that the Sb-doped ZnO thin films prepared at the experiments are high c-axis oriented. It was worth noting that p-type sample had the worst crystallinity. The measurements of low-temperature photoluminescence (PL) spectra indicate that the sample annealed at the temperatures of 950 degrees C showed strong acceptor-bound exciton (A(0)X) emission, and confirmed that it is related to Sb-doping by comparing with the undoped ZnO low-temperature PL spectrum. (C) 2011 Elsevier B.V. All rights reserved.