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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：中科院上海硅酸盐研究所
学位：博士
所在单位：物理学院
学科：微电子学与固体电子学. 凝聚态物理
办公地点：大连理工大学科技园C座301-1办公室
联系方式：E-mail:jmbian@dlut.edu.cn.
电子邮箱：jmbian@dlut.edu.cn
Photoluminescence study of Sb-doped ZnO films deposited by a closed tube CVT technique
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论文类型：期刊论文
发表时间：2011-01-11
发表刊物：VACUUM
收录刊物：Scopus、SCIE、EI
卷号：85
期号：6
页面范围：718-720
ISSN号：0042-207X
关键字：Sb-doped; Zinc oxide; Photoluminescence; Closed tube
摘要：Sb-doped ZnO film was obtained by CVT technique in a closed tube, and the temperature dependence of its photoluminescence spectrum was also investigated. The Sb-related photoluminescence peaks were observed. The peaks occurred at 3.352, 3.312, 3.240 and 3.168 eV were respectively assigned to the neutral acceptor-bound excition, free electron to acceptor transitions, and the first- and second-longitudinal optical phonon replicas emissions. The acceptor binding energy was determined to be 125 meV, aided by free electron to acceptor transition. (C) 2010 Elsevier Ltd. All rights reserved.