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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：中科院上海硅酸盐研究所
学位：博士
所在单位：物理学院
学科：微电子学与固体电子学. 凝聚态物理
办公地点：大连理工大学科技园C座301-1办公室
联系方式：E-mail:jmbian@dlut.edu.cn.
电子邮箱：jmbian@dlut.edu.cn
Realization of Ultraviolet Electroluminescence from ZnO Homojunction Fabricated on Silicon Substrate with p-Type ZnO:N Layer Formed by Radical N2O Doping
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论文类型：期刊论文
发表时间：2008-12-01
发表刊物：CHINESE PHYSICS LETTERS
收录刊物：SCIE、ISTIC、Scopus
卷号：25
期号：12
页面范围：4345-4347
ISSN号：0256-307X
摘要：ZnO homojunction light-emitting diodes are fabricated on Si(100) substrates by plasma assisted metal organic chemical vapour deposition. A p-type layer of nitrogen-doped ZnO film is formed using radical N2O as the acceptor precursor. The n-type ZnO layer is composed of un-doped ZnO film. The device exhibits desirable rectifying behaviour with a turn-on voltage of 3.3 V and a reverse breakdown voltage higher than 6V. Distinct electroluminescence emissions centred at 395 nm and 490 nm are detected from this device at forward current higher than 20 mA at room temperature.