BAND GAP PREDICTION OF ALLOYED SEMICONDUCTORS
发布时间：2019-03-09
点击次数：
- 论文类型：
- 期刊论文
- 发表时间：
- 2011-09-01
- 发表刊物：
- FUNCTIONAL MATERIALS LETTERS
- 收录刊物：
- EI、SCIE、Scopus
- 文献类型：
- J
- 卷号：
- 4
- 期号：
- 3
- 页面范围：
- 217-219
- ISSN号：
- 1793-6047
- 关键字：
- Band gap engineering; alloyed semiconductor; electronegativity
- 摘要：
- We have proposed an efficient method to quantitatively calculate the band gap values of ternary A(x)B(1-x)C and AB(x)C(1-x) alloyed semiconductors in terms of the dopant concentration x and some fundamental atom parameters such as electronegativity. The calculated band gap values of some typical alloyed semiconductors can agree well with the available experimental data. Taking MgxZn1-xO and CdxZn1-xO as examples, the composition dependent band gap values of alloys with both wurtzite and rocksalt structures were quantitatively predicted. This work provides a guideline in compositionally tuning the band gap of alloyed semiconductors, which will greatly facilitate the band gap engineering of semiconductors.
- 第一作者
- Li, Keyan
- 合写作者
- Xue, Dongfeng,Li, Yanju
- 通讯作者
- Li, KY (reprint author), Dalian Univ Technol, Sch Chem Engn, State Key Lab Fine Chem, Dalian 116024, Peoples R China.