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COMPOSITION DEPENDENCE OF BULK MODULUS AND BOND LENGTH OF MgxZn1-xO (x=0.0-1.0) ALLOY SEMICONDUCTORS

发布时间:2019-03-09
点击次数:
论文类型:
期刊论文
发表时间:
2010-12-01
发表刊物:
FUNCTIONAL MATERIALS LETTERS
收录刊物:
Scopus、EI、SCIE
文献类型:
J
卷号:
3
期号:
4
页面范围:
241-244
ISSN号:
1793-6047
关键字:
MgxZn1-xO alloy; bulk modulus; bond length; electronegativity; chemical bond
摘要:
For the first time, a general viewpoint of electronegativity and chemical bond in alloy semiconductors, e.g., MgxZn1-xO (x = 0.0-1.0) was proposed. The variation of bulk modulus and bond length, as well as their dependence on Mg concentration x were quantitatively simulated. The bulk moduli of MgxZn1-xO alloys decrease with increasing Mg concentration x. The detailed variation of bond lengths of both Mg-O and Zn-O in MgxZn1-xO alloys in the whole composition range was determined, which is less than 0.007 angstrom. The valence state of Mg is larger than that of Zn when x = 0.0-1.0, which leads to the increase of valence state of O with increasing Mg concentration x. The current results clearly indicate that MgxZn1-xO condenses in an alloy state.
第一作者
Li, Keyan
合写作者
Xue, Dongfeng,Ding, Zhongsheng
通讯作者
Xue, DF (reprint author), Dalian Univ Technol, Sch Chem Engn, State Key Lab Fine Chem, Dept Mat Sci & Chem Engn, Dalian 116024, Peoples R China.

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