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COMPOSITION DEPENDENCE OF BULK MODULUS AND BOND LENGTH OF MgxZn1-xO (x=0.0-1.0) ALLOY SEMICONDUCTORS

发表时间:2019-03-09
点击次数:
论文类型:
期刊论文
第一作者:
Li, Keyan
通讯作者:
Xue, DF (reprint author), Dalian Univ Technol, Sch Chem Engn, State Key Lab Fine Chem, Dept Mat Sci & Chem Engn, Dalian 116024, Peoples R China.
合写作者:
Ding, Zhongsheng,Xue, Dongfeng
发表时间:
2010-12-01
发表刊物:
FUNCTIONAL MATERIALS LETTERS
收录刊物:
SCIE、EI、Scopus
文献类型:
J
卷号:
3
期号:
4
页面范围:
241-244
ISSN号:
1793-6047
关键字:
MgxZn1-xO alloy; bulk modulus; bond length; electronegativity; chemical bond
摘要:
For the first time, a general viewpoint of electronegativity and chemical bond in alloy semiconductors, e.g., MgxZn1-xO (x = 0.0-1.0) was proposed. The variation of bulk modulus and bond length, as well as their dependence on Mg concentration x were quantitatively simulated. The bulk moduli of MgxZn1-xO alloys decrease with increasing Mg concentration x. The detailed variation of bond lengths of both Mg-O and Zn-O in MgxZn1-xO alloys in the whole composition range was determined, which is less than 0.007 angstrom. The valence state of Mg is larger than that of Zn when x = 0.0-1.0, which leads to the increase of valence state of O with increasing Mg concentration x. The current results clearly indicate that MgxZn1-xO condenses in an alloy state.
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