Indexed by:期刊论文
Date of Publication:2016-06-15
Journal:实验力学
Included Journals:PKU、ISTIC、CSCD
Volume:31
Issue:3
Page Number:306-314
ISSN No.:1001-4888
Key Words:应变硅;半导体多层异质结构;横截面样品;显微拉曼光谱;残余应力
Abstract:应变硅技术是一种被称为延续摩尔定律的技术,是集成微电子技术的热点之一.本文以锗硅缓冲双轴应变硅材料(ε-Si/Ge0.3Si0.7/GexSi1-x/C-Si)为研究对象,采用显微拉曼光谱技术,开展了该多层半导体异质结构内部残余应力的实验力学分析.这是面向多层结构残余应力与表/界面力学行为的多尺度实验力学分析,本文首先简述了该应变硅的制造工艺和超低粗糙度横截面样品的加工方法,并推导了针对锗硅合金拉曼-力学测量修正关系,进而对应变硅样品的表面和横截面进行了显微拉曼力学测量实验,给出了多层异质结构内部的残余应力分布,并以此为基础讨论了多层界面的力学行为.
Professor
Supervisor of Doctorate Candidates
Supervisor of Master's Candidates
Gender:Male
Alma Mater:Dalian University of Technology (DUT)
Degree:Doctoral Degree
School/Department:State Key Laboratory of Industrial Equipment for Structral Analysis, Department of Engineering Mechanics
Discipline:Solid Mechanics. Applied and Experimental Mechanics. Engineering Mechanics. Mechanical Manufacture and Automation. Vehicle Engineering. Aerospace Mechanics and Engineering. mechanics of manufacturing process
Business Address:Room 321, Department of Engineering Mechanics
Contact Information:Tel.: 86 0411-84708406 Email: leizk@dlut.edu.cn
Open time:..
The Last Update Time:..
