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论文类型：会议论文
发表时间：2008-01-01
收录刊物：EI、CPCI-S、SCIE
卷号：373-374
页面范围：497-+
关键字：ion implantation; scratch; residual stress; micro-Raman Spectroscopy
摘要：Surface modification mechanism on scratch of ion implanted p-Si (100) is investigated by scanning electric microscopy and micro-Raman spectroscopy. Raman experimental results reveal that the amorphous Si appears near the scratch during the scratching process, while the ion implantation adjusts the structural parameters of the amorphous Si and changes the residual stress state of the surface scratch from tension to compression. Moreover, Raman experimental results reveal that the laser power synchronously decreases Raman shift and full width of half maximum intensity (FWHM). The laser heating effect can be neglected because a lower laser power is selected in our measurements.