教授 博士生导师 硕士生导师
性别: 男
毕业院校: 大连理工大学
学位: 博士
所在单位: 材料科学与工程学院
学科: 材料学. 功能材料化学与化工. 化学工程
办公地点: 材料楼330办公室
联系方式: 0411-84706595
电子邮箱: huang@dlut.edu.cn
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论文类型: 期刊论文
发表时间: 2018-03-01
发表刊物: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
收录刊物: SCIE、EI
卷号: 29
期号: 6
页面范围: 4383-4390
ISSN号: 0957-4522
摘要: In this research, the shielding effect of Ag3Sn particles on Cu6Sn5 grain boundaries in isothermal heating and cooling of multiple reflows was investigated in Sn/Cu and Sn3.5Ag/Cu solder bumps by utilizing the real-time imaging technology of Shanghai Synchrotron Radiation Facility as well as scanning electron microscope. Results show that controlled by volume diffusion growth mechanism, the value of time exponent n for Sn is much closer to 1/2 with increasing reflow cycle than for Sn3.5Ag that governed by both grain boundary and volume diffusion mechanisms in isothermal heating. Consequently, IMC increment in Sn3.5Ag is larger than in Sn due to the Cu supplement effect of J(*) (in-b) in cooling during multiple reflows. The reason for the phenomena may be the shielding effect of Ag3Sn nano particles on grain boundaries in Sn3.5Ag during multiple reflow process.