大连理工大学  登录  English 
黄明亮
点赞:

教授   博士生导师   硕士生导师

性别: 男

毕业院校: 大连理工大学

学位: 博士

所在单位: 材料科学与工程学院

学科: 材料学. 功能材料化学与化工. 化学工程

办公地点: 材料楼330办公室

联系方式: 0411-84706595

电子邮箱: huang@dlut.edu.cn

手机版

访问量:

开通时间: ..

最后更新时间: ..

当前位置: 黄明亮 >> 科学研究 >> 论文成果
Effect of intermetallic compound thickness on tensile behavior of Cu/Sn/Cu micro interconnects

点击次数:

论文类型: 会议论文

发表时间: 2017-01-01

收录刊物: SCIE、EI、CPCI-S、Scopus

页面范围: 1286-1290

关键字: Cu/Sn/Cu interconnect; thermal aging; tensile test; failure analysis; interfacial reaction; thickness

摘要: The effect of intermetallic compound (IMC) thickness on tensile behavior of the Cu/Sn/Cu micro interconnects was investigated after thermal aging under synchrotron radiation experiments, and the tensile strength of the full IMC interconnects was also measured. The results showed that a thicker IMC layer induced a higher tensile strength of the Cu/Sn/Cu interconnects. The average tensile strength of full IMC interconnects exceeded 90 MPa, which was higher than that of Sn containing interconnects. Moreover, the fracture mode tended to change from ductile fracture inside the solder to brittle failure at the CU3Sn/Cu6Sn5 interface. The failure was attributed to the bubbles at the interface as well as the stress concentration at corners. The uneven interface between the interfacial IMC and the solder can improve the tensile strength of micro interconnects.

辽ICP备05001357号 地址:中国·辽宁省大连市甘井子区凌工路2号 邮编:116024
版权所有:大连理工大学