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黄明亮
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教授   博士生导师   硕士生导师

性别: 男

毕业院校: 大连理工大学

学位: 博士

所在单位: 材料科学与工程学院

学科: 材料学. 功能材料化学与化工. 化学工程

办公地点: 材料楼330办公室

联系方式: 0411-84706595

电子邮箱: huang@dlut.edu.cn

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Shear failure analysis of sub-50 μm flip chip lead-free solder bumps

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论文类型: 会议论文

发表时间: 2007-06-26

收录刊物: EI、Scopus

摘要: Sn-0.7Cu, Sn-3.5Ag, Sn-4Ag-0.5Cu lead-free solder bumps were produced by stencil printing of solder pastes on wafers having electroless Ni-P immersion Au (ENIG) under bump metallization (UBM). The diameter of the solder bumps was 45-47 μm. Shear tests were carried out to evaluate the bonding quality of the solder bumps after multiple reflows and thermal aging at 150°C. The fracture surface, cross section microstructure and interfacial intermetallic compounds (IMCs) growth kinetics were investigated to identify the correlation between failure mode and the metallurgical characteristics of the UBM/solder interface IMC layers. The interfacial IMC phase was mainly (CuNi) 6Sn5 for Sn-4Ag-0.5Cu and Sn-0.7Cu solders and Ni 3Sn4 for Sn-3.5Ag solder. The coarsening of Ni 3Sn4 IMC phase for Sn-3.5Ag solder was much greater than that of (CuNi)6Sn5 for Sn-0.7Cu and Sn-4Ag-0.5Cu solders with increasing reflow times. Even if only a small amount of Cu is presented at the interface during reaction, the type, size, morphology and evolution of the interfacial IMCs are greatly different. ©2007 IEEE.

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