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Indexed by:期刊论文

Date of Publication:2013-07-01

Journal:VACUUM

Included Journals:SCIE、EI

Volume:93

Page Number:28-30

ISSN No.:0042-207X

Key Words:P3HT; n-Si; Transient photovoltage

Abstract:Transient photovoltage (PV) phenomena in regioregular poly(3-hexylthiophene) (P3HT)/n-crystalline-silicon (n-Si) heterojunction are studied under pulsed laser illumination. The PV transients of P3HT/n-Si heterojunctions are strongly retarded in time up to about 3 us. The PV transients of P3HT/n-Si heterojunctions with thinner P3HT layer convert from positive to negative at longer times, which is caused by the long release time of trapped electrons at the P3HT/n-Si interface. Moreover, we find that the response of transient PV is dependent on the thickness of P3HT layer, the temperature and the excitation level. (C) 2013 Elsevier Ltd. All rights reserved.