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Indexed by:期刊论文

Date of Publication:2013-04-01

Journal:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Included Journals:SCIE、EI

Volume:16

Issue:2

Page Number:520-524

ISSN No.:1369-8001

Key Words:ZnO nanorod; Si; Surface photovoltage; Kelvin probe

Abstract:In this work, n-type ZnO nanorods (NRs) were fabricated on a p-type Si substrate to form a ZnO NRs/Si structure using a low-temperature wet chemical bath deposition method. Kelvin-probe-based surface photovoltage (KP-based SPV) technology was used to study the behavior of surface photogenerated charges for the as-grown heterostructure. In general, the KP-based SW response range of the ZnO NRs/Si structure was significantly expanded compared with the bare Si substrate, due to the incorporation of ZnO NRs. Moreover, the SPV response amplitude for ZnO NRs/Si structure also depended on the length and diameter of the NRs, and the corresponding mechanism was elucidated in terms of O-2 adsorption. The photovoltaic application of the ZnO NRs/Si based structure would benefit significantly from these achievements. (C) 2012 Elsevier Ltd. All rights reserved.