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Indexed by:期刊论文

Date of Publication:2012-08-27

Journal:APPLIED PHYSICS LETTERS

Included Journals:SCIE、EI、Scopus

Volume:101

Issue:9

ISSN No.:0003-6951

Abstract:The local breakdown behavior of multicrystalline silicon solar cells occurring at reverse bias voltages of -10 V has been investigated by means of electroluminescence images and temperature dependent current density-voltage (J-V) measurements. Identification of temperature coefficient of breakdown current indicates that Zener effect is the dominating mechanism of the local breakdown (so-called type II breakdown). Investigations of the carrier transport mechanism under forward bias voltage suggest that there exist a large amount of defects in depletion region. The origin of type II breakdown is attributed to the defects in depletion region. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4749821]