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Indexed by:期刊论文

Date of Publication:2011-06-15

Journal:APPLIED SURFACE SCIENCE

Included Journals:Scopus、SCIE、EI

Volume:257

Issue:17

Page Number:7411-7414

ISSN No.:0169-4332

Key Words:Pyramids; Nanowires; Reflectance; Etching

Abstract:A pyramid and nanowire binary structure of monocrystalline silicon wafer was fabricated by chemical etching. Much lower reflectance of silicon wafer with this structure was obtained compared with that of single pyramid or nanowaire arrays. The morphology, reflectivity and etching thickness of this structure were studied, as well as the influence on them caused by etching time and thickness of silver film. An average reflectance of 0.9% was obtained under optimized condition. The formation mechanism of silicon nanowires was explained by experimental evidence. (C) 2011 Elsevier B. V. All rights reserved.