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论文类型： 期刊论文

发表时间： 2013-07-01

发表刊物： VACUUM

收录刊物： SCIE、EI

卷号： 93

页面范围： 28-30

ISSN号： 0042-207X

关键字： P3HT; n-Si; Transient photovoltage

摘要： Transient photovoltage (PV) phenomena in regioregular poly(3-hexylthiophene) (P3HT)/n-crystalline-silicon (n-Si) heterojunction are studied under pulsed laser illumination. The PV transients of P3HT/n-Si heterojunctions are strongly retarded in time up to about 3 us. The PV transients of P3HT/n-Si heterojunctions with thinner P3HT layer convert from positive to negative at longer times, which is caused by the long release time of trapped electrons at the P3HT/n-Si interface. Moreover, we find that the response of transient PV is dependent on the thickness of P3HT layer, the temperature and the excitation level. (C) 2013 Elsevier Ltd. All rights reserved.