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论文类型： 期刊论文

发表时间： 2013-04-01

发表刊物： MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

收录刊物： SCIE、EI

卷号： 16

期号： 2

页面范围： 520-524

ISSN号： 1369-8001

关键字： ZnO nanorod; Si; Surface photovoltage; Kelvin probe

摘要： In this work, n-type ZnO nanorods (NRs) were fabricated on a p-type Si substrate to form a ZnO NRs/Si structure using a low-temperature wet chemical bath deposition method. Kelvin-probe-based surface photovoltage (KP-based SPV) technology was used to study the behavior of surface photogenerated charges for the as-grown heterostructure. In general, the KP-based SW response range of the ZnO NRs/Si structure was significantly expanded compared with the bare Si substrate, due to the incorporation of ZnO NRs. Moreover, the SPV response amplitude for ZnO NRs/Si structure also depended on the length and diameter of the NRs, and the corresponding mechanism was elucidated in terms of O-2 adsorption. The photovoltaic application of the ZnO NRs/Si based structure would benefit significantly from these achievements. (C) 2012 Elsevier Ltd. All rights reserved.