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论文类型： 期刊论文

发表时间： 2012-08-27

发表刊物： APPLIED PHYSICS LETTERS

收录刊物： SCIE、EI、Scopus

卷号： 101

期号： 9

ISSN号： 0003-6951

摘要： The local breakdown behavior of multicrystalline silicon solar cells occurring at reverse bias voltages of -10 V has been investigated by means of electroluminescence images and temperature dependent current density-voltage (J-V) measurements. Identification of temperature coefficient of breakdown current indicates that Zener effect is the dominating mechanism of the local breakdown (so-called type II breakdown). Investigations of the carrier transport mechanism under forward bias voltage suggest that there exist a large amount of defects in depletion region. The origin of type II breakdown is attributed to the defects in depletion region. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4749821]