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论文类型： 期刊论文

发表时间： 2012-07-20

发表刊物： VACUUM

收录刊物： SCIE

卷号： 86

期号： 12

页面范围： 2158-2161

ISSN号： 0042-207X

关键字： P3HT/n-Si heterojunction; Surface photovoltage spectroscopy; Charge separation and transport

摘要： Surface photovoltage spectroscopy (SPS) was used to investigate the interactions of the interface between regioregular poly(3-hexylthiophene) (P3HT) and n-type single crystalline silicon. The SPS responses of silicon and the P3HT/n-Si heterojunction caused by band to band transition of silicon are 30 mV and 160 mV respectively. The band-bending in the silicon side of the P3HT/n-Si structure is larger than that of bare n-Si. The density of the interface states of the P3HT/n-Si heterojunction increased significantly after the deposition of P3HT. Based on the contact potential difference (CPD) transient results, charge transport and separation processes are fast in the silicon substrate and slow in the P3HT layer respectively. (C) 2012 Elsevier Ltd. All rights reserved.