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论文类型： 期刊论文

发表时间： 2007-12-01

发表刊物： MICROELECTRONICS JOURNAL

收录刊物： SCIE

卷号： 38

期号： 12

页面范围： 1191-1195

ISSN号： 0026-2692

关键字： cathodic decomposition; cyclic voltammetry; porous InP

摘要： Here we present a way to fabricate porous structure of InP by cathodic decomposition in a mixture of HCl and HNO(3). The direction of main pores was observed with a misorientation of similar to 8 degrees relative to [100]. Parallel side pores were grown on wall with a misorientation of similar to 54 degrees and similar to 43 degrees relative to [100] at -1.8 and -2.3 V, respectively. If the applied potential becomes more negative, the side pores interconnected is more obvious. Most of the electrons are concentrated on tips of the pores due to field enhancement effects, which results in the prior decomposition of InP at the tips of the pores in the process. The growth of the main pore is along with electric field direction. The formation of nonsymmetrical side pores is also discussed in the article. (C) 2007 Elsevier Ltd. All rights reserved.