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Indexed by:期刊论文

Date of Publication:2013-08-15

Journal:8th Asian-European International Conference on Plasma Surface Engineering (AEPSE)

Included Journals:SCIE、EI、CPCI-S、Scopus

Volume:228

Issue:SUPPL.1

Page Number:S412-S415

ISSN No.:0257-8972

Key Words:Ar/H-2; P-type nc-Si:H; ECR-PECVD; Langmuir

Abstract:Boron-doped hydrogenated nanocrystalline silicon (nc-Si(B):H) films were prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD). The effect of Ar/H-2 ratio on the characteristic of as-grown nc-Si(B):H films was investigated systematically with Raman scattering, XRD, XPS as well as Hall effect measurements. The experimental results indicate that the increase of Ar/H-2 ratio can enhance the concentration of B in the as-grown films. On the other hand, with the Ar/H-2 ratio increasing, the crystallinity of the films deteriorated sharply, and the electrical properties of the as-grown films decreased. Langmuir Probe was used to investigate the electron temperature (T-e) of microwave activated B2H6/Ar/H-2 plasmas. Finally, the microscopic mechanism of the enhancement in doping efficiency was elucidated in terms of the plasma reaction equations of B2H6 and Langmuir probe testing result. (C) 2012 Elsevier B.V. All rights reserved.