Release Time:2019-03-11  Hits:

Indexed by: Journal Article

Date of Publication: 2012-10-30

Journal: 3rd International Conference on Microelectronics and Plasma Technology (ICMAP)

Included Journals: Scopus、CPCI-S、EI、SCIE

Volume: 521

Page Number: 181-184

ISSN: 0040-6090

Key Words: Ar/H-2; nc-Si:H; ECR-PECVD; Doping

Abstract: Phosphorus-doped hydrogenated nanocrystalline silicon films (nc-Si(P):H) were prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition. The effect of Ar/H-2 ratio on the characteristics of as-grown nc-Si(P):H films was investigated systematically with Raman scattering, Hall effect measurements as well as Fourier Transform infrared spectroscopy (FTIR). The results indicated that the Ar/H-2 ratio played a critical role for the crystalline quality and electrical properties of the nc-Si:H films. FTIR also showed that infrared spectrum intensity of SiH2 bonding mode peak decreased when Ar/H-2 ratio increased. The optimal value Ar/H-2 ratio of 10/15 was obtained for high quality nc-Si(P):H films with high electron density and the mechanism was elucidated in terms of Raman and FTIR analysis. (C) 2011 Elsevier B. V. All rights reserved.