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Indexed by:会议论文

Date of Publication:2010-08-02

Included Journals:EI、CPCI-S、Scopus

Volume:654-656

Page Number:1716-+

Key Words:GaN; nitridation; glass substrate; PEMOCVD

Abstract:Nitridation of Corning 7101 glass substrate and the following GaN deposition were carried out in a self-developed electron cyclotron resonance plasma enhanced metalorganic chemical vapor deposition (ECR-PEMOCVD) system equipped with in-situ reflection high-energy electron diffraction (RHEED) monitoring. RHEED pattern and X-Ray diffraction (XRD) spectrum showed that the nitridation can effectively improve the C-axis orientation of as-prepared GaN film. Atomic force microscope (AFM) analysis indicated that the average grain size increased significantly with 5 min of nitriding, but degraded as nitriding time increased. The optimum nitriding time was achieved as 5 min. The effect of nitridation on the GaN film deposition and its formation mechanism were discussed.