Release Time:2023-03-30  Hits:

Date of Publication: 2022-10-07

Journal: 功能材料

Issue: 11

Page Number: 1836-1839

ISSN: 1001-9731

Abstract: GaN films have been deposited on corning 7101 glass substrate by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) system at low temperature. The effect of substrate nitriding time on the quality of GaN flim is studied using reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscope (AFM) and Hall measurements. The results show that GaN film deposited with substrate nitrided for 5min is of high c-axis preferred orientation and highly crystallined, its surface is composed of many submicron grains piled in the consistent orientation and the film shows the n-type electrical behavior. The crystallization of GaN film degrades as the substrate nitriding time increased.

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