副教授 博士生导师 硕士生导师
任职 : 辽宁省能源材料及器件重点实验室副主任
性别: 男
毕业院校: 大连理工大学
学位: 博士
所在单位: 材料科学与工程学院
学科: 材料物理与化学. 材料表面工程
办公地点: 新三束4#楼311室
联系方式: 0411-84706661-101
电子邮箱: aimin@dlut.edu.cn
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论文类型: 期刊论文
发表时间: 2013-08-15
发表刊物: 8th Asian-European International Conference on Plasma Surface Engineering (AEPSE)
收录刊物: SCIE、EI、CPCI-S、Scopus
卷号: 228
期号: SUPPL.1
页面范围: S412-S415
ISSN号: 0257-8972
关键字: Ar/H-2; P-type nc-Si:H; ECR-PECVD; Langmuir
摘要: Boron-doped hydrogenated nanocrystalline silicon (nc-Si(B):H) films were prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD). The effect of Ar/H-2 ratio on the characteristic of as-grown nc-Si(B):H films was investigated systematically with Raman scattering, XRD, XPS as well as Hall effect measurements. The experimental results indicate that the increase of Ar/H-2 ratio can enhance the concentration of B in the as-grown films. On the other hand, with the Ar/H-2 ratio increasing, the crystallinity of the films deteriorated sharply, and the electrical properties of the as-grown films decreased. Langmuir Probe was used to investigate the electron temperature (T-e) of microwave activated B2H6/Ar/H-2 plasmas. Finally, the microscopic mechanism of the enhancement in doping efficiency was elucidated in terms of the plasma reaction equations of B2H6 and Langmuir probe testing result. (C) 2012 Elsevier B.V. All rights reserved.