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论文类型： 期刊论文

发表时间： 2012-10-30

发表刊物： 3rd International Conference on Microelectronics and Plasma Technology (ICMAP)

收录刊物： SCIE、EI、CPCI-S、Scopus

卷号： 521

页面范围： 181-184

ISSN号： 0040-6090

关键字： Ar/H-2; nc-Si:H; ECR-PECVD; Doping

摘要： Phosphorus-doped hydrogenated nanocrystalline silicon films (nc-Si(P):H) were prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition. The effect of Ar/H-2 ratio on the characteristics of as-grown nc-Si(P):H films was investigated systematically with Raman scattering, Hall effect measurements as well as Fourier Transform infrared spectroscopy (FTIR). The results indicated that the Ar/H-2 ratio played a critical role for the crystalline quality and electrical properties of the nc-Si:H films. FTIR also showed that infrared spectrum intensity of SiH2 bonding mode peak decreased when Ar/H-2 ratio increased. The optimal value Ar/H-2 ratio of 10/15 was obtained for high quality nc-Si(P):H films with high electron density and the mechanism was elucidated in terms of Raman and FTIR analysis. (C) 2011 Elsevier B. V. All rights reserved.