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发表时间： 2022-10-10

发表刊物： 半导体光电

期号： 4

页面范围： 557-562

ISSN号： 1001-5868

摘要： GaN films were deposited on Al films with corning 7101 glass substrates by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD). RHEED and XRD indicate that the GaN films deposited under higher TMGa flow rates have strong c-axis preferred orientation. SEM shows that the surface of the GaN films becomes smoother with the increase of TMGa flow rate. The origin of the three Raman peaks A1 (TO), E1 (TO) and 281.1 cm-1 appearing in the Raman spectroscopy is discussed. The down shift for the E1 (high) mode may be due to the intrinsic stress and crystallite size effect, and the A, (LO) mode down shift may be also caused by crystallite size effect.

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