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发表时间： 2022-10-07

发表刊物： 功能材料

期号： 11

页面范围： 1836-1839

ISSN号： 1001-9731

摘要： GaN films have been deposited on corning 7101 glass substrate by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) system at low temperature. The effect of substrate nitriding time on the quality of GaN flim is studied using reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscope (AFM) and Hall measurements. The results show that GaN film deposited with substrate nitrided for 5min is of high c-axis preferred orientation and highly crystallined, its surface is composed of many submicron grains piled in the consistent orientation and the film shows the n-type electrical behavior. The crystallization of GaN film degrades as the substrate nitriding time increased.

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