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Influence of the low-frequency source parameters on the plasma characteristics in a dual frequency capacitively coupled plasma reactor: Two dimensional simulations

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Indexed by:期刊论文

Date of Publication:2009-06-10

Journal:PROGRESS IN NATURAL SCIENCE

Included Journals:SCIE

Volume:19

Issue:6

Page Number:677-684

ISSN No.:1002-0071

Key Words:Dual frequency; Capacitively coupled plasma; Fluid simulation

Abstract:A two-dimensional (2D) fluid model is presented to study the discharge of argon in a dual frequency capacitively coupled plasma (CCP) reactor. We are interested in the influence of low-frequency (LF) source parameters such as applied voltage amplitudes and low frequencies on the plasma characteristics. In this paper, the high frequency is set to 60 MHz with voltage 50 V. The simulations were carried out for low frequencies of 1, 2 and 6 MHz with LF voltage 100 V, and for LF voltages of 60, 90 and 120 V with low frequency 2 MHz. The results of 2D distributions of electric field and ion density, the ion flux impinging on the substrate and the ion energy on the powered electrode are shown. As the low frequency increases, two sources become from uncoupling to coupling. When two sources are uncoupling, the increase in LF has little impact on the plasma characteristics, but when two sources are coupling, the increase in LF decreases the uniformities of ion density and ion flux noticeably. It is also found that with the increase in LF voltage, the uniformities in the radial direction of ion density distribution and ion flux at the powered electrode decreases significantly, and the energy of ions bombarding on the powered electrode increases significantly. (C) 2009 National Natural Science Foundation of China and Chinese Academy of Sciences. Published by Elsevier Limited and Science in China Press. All rights reserved.

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