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论文类型：期刊论文

发表时间：2017-01-01

发表刊物：JOURNAL OF NANO RESEARCH

收录刊物：SCIE、EI

卷号：49

页面范围：18-26

ISSN号：1662-5250

关键字：Al2O3; black silicon; surface passivation; chemical liquid phase deposition

摘要：Thin Al2O3 films were deposited on p-type black silicon (b-Si) by using chemical liquid phase deposition (CLD) technique. The influence of annealing temperatures on the structural and optical properties of Al2O3 films was investigated. The b-Si with 80-nm Al2O3 films exhibits a low total reflectance of 5%. The sample annealed 300 degrees C exhibits negative fixed charge with the density of 1.5x10(12) cm(-2). With the increasing of annealing temperature, negative shift of C-V curve was observed, indicating the polarity of fixed charge changes to positive, with maximal the density of 8.7x10(11) cm(-2). The evolution of the polarity of fixed charge is assigned to the decreasing of O: Al ratio caused by the transition of the crystalline type of Al2O3. The change of fixed charge polarity in Al2O3 provides a feasible route for both p-and n-type Si passivation in Si solar cells by adjusting the thermal post-treatment.