点击次数：

发布时间：2019-03-09

论文类型：期刊论文

发表时间：2011-10-31

发表刊物：APPLIED PHYSICS LETTERS

收录刊物：EI、SCIE、Scopus

卷号：99

期号：18

ISSN号：0003-6951

摘要：Room temperature ferromagnetism (RTFM) was observed in Li-N codoped ZnO thin films [ZnO:(Li, N)] fabricated by plasma-assisted molecular beam epitaxy, and p-type ZnO:(Li, N) shows the strongest RTFM. Positron annihilation spectroscopy and low temperature photoluminescence measurements indicate that the RTFM in ZnO:(Li, N) is attributed to the defect complex related to V(Zn), such as V(Zn) and Li(i)-NO-V(Zn) complex, well supported by first-principles calculations. The incorporation of NO can stabilize and enhance the RTFM of ZnO:(Li, N) by combining with Li(i) to form Li(i)-NO complex, which restrains the compensation of Li(i) for V(Zn) and makes the ZnO:(Li, N) conduct in p-type. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3657412]