论文类型：期刊论文
发表时间：2018-08-01
发表刊物：SOLAR ENERGY
收录刊物：SCIE
卷号：170
页面范围：1001-1008
ISSN号：0038-092X
关键字：N-oxoammonium salts; P-type dopant; Organic electronic devices; Solid state dye sensitized solar cells
摘要：P-type doping is a rational strategy for the enhancement of hole transporting properties of the organic semiconductors as well as the device performance of organic photo-electric devices. We originally introduce a stable and solution processed p-type dopant based on N-oxoammonium salts termed 2,2,6,6-tetramethyl-1-oxopiperidinebromide salt (TEMPO-Br) for 2,2',7,7'-tetrakis(N, N-di-p-methoxyphenyl-amine)9,9'-spirobifluorene (Spiro-OMeTAD) based solid state dye sensitized solar cells (ssDSC). By introducing TEMPO-Br doped Spiro-OMeTAD and a commercialized D-pi-A sensitizer into ssDSCs, a promising device performance of 6.83% is achieved under simulated AM 1.5G solar irradiation (100 mW cm(-2)), which is significantly better than the control devices ( similar to 1.7 times). The doping effect of TEMPO-Br on the photophysical and electrochemical properties of Spiro-OMeTAD, solid state device performance, cationic dye regeneration kinetics and preliminary long-term stability have been systematically investigated. This work indicates a potential application of N-oxoammonium salts as chemical P-type dopants for triphenylamine based hole transporting materials in solid state photo-electric devices.
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