Release Time:2022-07-05  Hits:

Indexed by: Journal Article

Date of Publication: 2022-06-30

Journal: 物理学报

Volume: 58

Issue: 6

Page Number: 4109-4116

ISSN: 1000-3290

Abstract: Hydrogen-free SiNx films were deposited at N-2 flow rate ranging from 1 seem to 20 seem by microwave electron cyclotron resonance plasma enhanced unbalance magnetron sputtering system. We studied the influence of N-2 flow rate on the structural characteristics of deposited films in chemical structure, stoichiometry, composition at different depths in film, and hardness by using X-ray photoelectron spectroscopy and nano-indantation. The results indicate that the films deposited at low N-2 flow rate are Si-rich structure. The films deposited at 2 seem N-2 flow rate show an excellent stoichiometry with 94.8% Si-N bond content and uniformity of composition in different depths. At the same time, the films display the highest hardness value of 22.9 GPa. The films deposited at high N-2 flow rate contain too much N-Si-O bond and Si-O bond, which is caused by chemical absorption both on and in film in atmosphere. The films present N-rich structure. In this situation, the films display poor mechanical properties with hardness of only 12 GPa.

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