高热稳定性和低电阻率C掺杂Cu薄膜的制备方法
Release Time:2019-03-09 Hits:
First Author: 李晓娜
Disigner of the Invention: 董闯,聂利飞
Authorization Date: 2009-12-26
Authorization Number: ZL200910312326.7
Release Time:2019-03-09 Hits:
First Author: 李晓娜
Disigner of the Invention: 董闯,聂利飞
Authorization Date: 2009-12-26
Authorization Number: ZL200910312326.7