董闯

个人信息Personal Information

教授

博士生导师

硕士生导师

性别:男

毕业院校:法国洛林国立综合理工学院

学位:博士

所在单位:材料科学与工程学院

电子邮箱:dong@dlut.edu.cn

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Preparation and characterization of CuN-based ternary alloy films using Cr or Zr for stabilizing N

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论文类型:期刊论文

发表时间:2017-04-01

发表刊物:JOURNAL OF MATERIALS RESEARCH

收录刊物:SCIE、EI

卷号:32

期号:7

页面范围:1333-1342

ISSN号:0884-2914

关键字:Cu; nitride; hardness

摘要:The surface hardening of Cu is an effective way to keep good electrical conductivity and increase chemical inertness. Here, Cr and Zr are introduced into Cu films to stabilize N and increase the film hardness. CuN-based alloy films are prepared on single-crystal Si(100) substrates using magnetron sputtering. Cu(Cr, N) films are mainly composed of Cu and Cr2N nanocrystals while Cu and Zr2N nanocrystals compose Cu(Zr, N) films. The thermal stability of the ternary films comes from the strong interaction between Cr (or Zr) and N which is contributing to the generation of stable nitrides. In terms of resistivity and hardness, the Cu(Cr, N) and Cu(Zr, N) films prepared at the N-2/Ar ratio of 1/10 show preferable properties. Especially, the Cu86.1Zr6.1N7.8 film exhibits the highest hardness (similar to 4.7 GPa) and lowest resistivity (63.6 mu Omega.cm). The chemical inertness of Cu film can also be improved by adding Cr-N and Zr-N. These ternary films are expected to apply for Cu surface nitrogenization.