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论文类型：期刊论文

发表时间：2014-11-01

发表刊物：JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

收录刊物：SCIE、EI、Scopus

卷号：32

期号：6

ISSN号：0734-2101

摘要：To improve the thermal stability of copper and avoid its diffusion into surrounding dielectrics or interfacial reactions with them, the authors applied the cluster-plus-glue-atom model to investigate barrierless Cu-Ni-M (M = Ti or Ta) seed layers. The dissolution of the third element (Ti or Ta) in the Cu lattice with the aid of Ni significantly improved the thermal stability of the Cu seed layer. The appropriate M/Ni (M = Ti or Ta) ratio was selected to obtain a low resistivity: the resistivity was as low as 2.5 mu Omega cm for the (Ti1.5/13.5Ni12/13.5)(0.3)Cu-99.7 film and 2.8 mu Omega cm for the (Ta1.1/13.1Ni12/13.1)(0.4)Cu-99.6 film after annealing at 500 degrees C for 1 h. After annealing at 500 degrees C for 40 h, the two films remained stable without forming a Cu3Si compound. The authors confirmed that the range of applications of the cluster-plus-glue-atom model could be extended. Therefore, a third element M with negative enthalpies of mixing with both Cu and Ni could be selected, under the premise that the mixing enthalpy of M-Ni is more negative than that of M-Cu. (C) 2014 American Vacuum Society.