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论文类型：期刊论文

发表时间：2014-04-15

发表刊物：SURFACE & COATINGS TECHNOLOGY

收录刊物：SCIE、EI、Scopus

卷号：244

页面范围：9-14

ISSN号：0257-8972

关键字：Cu interconnects; Carbon doping; Thin film

摘要：It was previously known that C-doping in Cu effectively enhances the film thermal stability and maintains a low electrical resistivity even upon high-temperature annealing, via a diffusion inhibiting the mechanism of C-stabilized oxide interlayer between Cu and Si. In the present work, the stability and resistivity are investigated in two Cu films doped with more C, respectively 2.9 at.% and 4.2 at.% as measured by EPMA. As expected, the thermal stability is even further enhanced, without significantly affecting the resistivity. After a systematic microstructural investigation by TEM, it is revealed that the relevant mechanism lies both in the enhanced stability via C dissolution in the silica native oxide layer at the Cu/Si interface and in the C-passivated Si surface zone beneath the layer. In the 4.2% C film, the Cu/Si interaction is mainly inhibited by self-forming SiC nano-particles and the resistivity remains below 3 u Omega.cm even upon annealing at 500 degrees C for 40 h. The C-doping can then be a simple process route towards manufacturing stable Cu interconnects. (C) 2014 Elsevier B.V. All rights reserved.