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论文类型：期刊论文

发表时间：2013-12-28

发表刊物：JOURNAL OF MATERIALS RESEARCH

收录刊物：SCIE、Scopus

卷号：28

期号：24

页面范围：3367-3373

ISSN号：0884-2914

摘要：In this paper, we demonstrate a thin film Cu-Ni-Nb alloy deposited directly on silicon, without a designated barrier, showing very high thermal stability at a temperature up to 700 degrees C for 1 h. Thin [Nb-Ni-12]Cu-x films were sputter deposited and annealed, and their material and electrical properties were studied. The results can be explained by the "cluster-plus-glue atom" model for stable solid solutions, where [Nb-Ni-12] cuboctahedral clusters are embedded in a Cu matrix. In this model, the clusters are congruent with the Cu minimizing atomic interactions allowing a good stability. The properties of the films were found to be affected by the Ni/Nb ratios. Especially, the ( Nb1.2/13.2Ni12/13.2)(0.3)Cu-99.7 film annealed at 500 degrees C for 1 h had the lowest electrical resistivity of about 2.7 mu Omega cm. And even after 40 h annealing at 500 degrees C, it maintained a low resistivity of about 2.8 mu Omega cm, demonstrating extremely high stabilities against silicide formation.