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论文类型：期刊论文

发表时间：2011-02-01

发表刊物：APPLIED SURFACE SCIENCE

收录刊物：SCIE、EI

卷号：257

期号：8

页面范围：3636-3640

ISSN号：0169-4332

关键字：Cu interconnects; Carbon; Thin film; Metallization

摘要：Electrical resistivities and thermal stabilities of carbon-doped Cu films on silicon have been investigated. The films were prepared by magnetron sputtering using a Cu-C alloy target. After annealing at 400 degrees C for 1 h, the resistivity maintains a low level at 2.7 mu Omega-cm and no Cu-Si reaction is detected in the film by X-ray diffraction (XRD) and transmission electron microscopy (TEM) observations. According to the secondary ion mass spectroscopy (SIMS) results, carbon is enriched near the interfacial region of Cu(C)/Si, and is considered responsible for the growth of an amorphous Cu(C)/Si interlayer that inhibits the Cu-Si inter-diffusion. Fine Cu grains, less than 100 nm, were present in the Cu(C) films after long-term and high-temperature annealings. The effect of C shows a combination of forming a self-passivated interface barrier layer and maintaining a fine-grained structure of Cu. A low current leakage measured on this Cu(C) film also provides further evidence for the carbon-induced diffusion barrier interlayer performance. (C) 2010 Elsevier B.V. All rights reserved.