Abstract: MoS2 thin films were fabricated using RF magnetron sputtering method with MoS2 as sputtering targets at different sputtering powers. XRD, SEM, TEM and XPS were used to analyze the thin films. The change of film structure and morphology during cycling and its effect on the cycling performance of the electrodes were discussed.The results show that the prepared MoS2 thin films with S-rich content were amorphous. The SEM results show that the S and Mo elements in the film were uniformly distributed and there was no segregation phenomenon. The XPS analysis results show that the sulfur phase existed in the prepared film, and the content of sulfur phase in the overall film was about 14 at.%. During the initial cycling process, uniformly distributed porous structure was formed in situ by the irreversible loss of sulfur contained in the MoS2 film. The porous structure could effectively alleviate the volume expansion of the film during subsequent cycling process, and increase the specific surface area of the active material. When the target power was 100W, the discharge specific capacity of the film was 429.8 mAh/g after 20 cycles. And after 300 cycles, the discharge specific capacity still maintained at 420.4 mAh/g, exhibiting the excellent cycle stability.

DOI：10.3969/j.issn.1001-9731.2020.08.016