GAO Junfeng
Professor

Gender:Male

Alma Mater:大连理工大学

[MORE]

MOBILE Version

Paper Publications

From Boron Cluster to Two-Dimensional Boron Sheet on Cu(111) Surface: Growth Mechanism and Hole Formation

Release time:2019-09-16 Hits:

Indexed by:期刊论文

Date of Publication:2013-11-18

Journal:SCIENTIFIC REPORTS

Included Journals:SCIE、PubMed、Scopus

Volume:3

Page Number:3238

ISSN No.:2045-2322

Abstract:As attractive analogue of graphene, boron monolayers have been theoretically predicted. However, due to electron deficiency of boron atom, synthesizing boron monolayer is very challenging in experiments. Using first-principles calculations, we explore stability and growth mechanism of various boron sheets on Cu(111) substrate. The monotonic decrease of formation energy of boron cluster B-N with increasing cluster size and low diffusion barrier for a single B atom on Cu(111) surface ensure continuous growth of two-dimensional (2D) boron cluster. During growth process, hexagonal holes can easily arise at the edge of a 2D triangular boron cluster and then diffuse entad. Hence, large-scale boron monolayer with mixed hexagonal-triangular geometry can be obtained via either depositing boron atoms directly on Cu(111) surface or soft landing of small planar BN clusters. Our theoretical predictions would stimulate further experiments of synthesizing boron sheets on metal substrates and thus enrich the variety of 2D monolayer materials.

Click:

The Last Update Time:..

  

Open time:..

DALIAN UNIVERSITY OF TECHNOLOGYLogin 中文